氮化鈧
氮化鈧 | |
---|---|
IUPAC名 Scandium nitride | |
別名 | 一氮化鈧 |
識別 | |
CAS號 | 25764-12-9 |
PubChem | 117629 |
ChemSpider | 105117 |
SMILES |
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性質 | |
化學式 | ScN |
摩爾質量 | 58.963 g·mol⁻¹ |
密度 | 4.4 g/cm3 |
熔點 | 2900 °C(3173 K) |
危險性 | |
GHS危險性符號 | |
GHS提示詞 | Danger |
H-術語 | H228 |
若非註明,所有數據均出自標準狀態(25 ℃,100 kPa)下。 |
氮化鈧是一種無機化合物,化學式為ScN,由Sc3+和N3−構成。它可以由銦-鈧熔體溶解氮氣來製備[1],並在鎢箔上通過升華和凝華來生長單晶。[2]氮化鈧也是二氧化矽(SiO2)或二氧化鉿(HfO2)底物上半導體的有效柵極。[3]
參考文獻
- ^ Zhang, Guodong; Kawamura, Fumio; Oshima, Yuichi; Villora, Encarnacion; Shimamura, Kiyoshi. Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts. Applied Ceramic Technology. 4 August 2016, 13 (6): 1134–1138. doi:10.1111/ijac.12576.
- ^ Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W. Crystal Grown and Properties of Scandium Nitride. Journal of Materials Science: Materials in Electronics. August 2004, 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c.
- ^ Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang. Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2. Japanese Journal of Applied Physics. 13 January 2006, 45 (2): L83–L85. doi:10.1143/JJAP.45.L83.